深圳市锐视安科技有限公司

IRF3205PBF

Description

Advanced HEXFET® Power MOSFETs from International

Rectifier utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET power MOSFETs are well known

for, provides the designer with an extremely efficient and

reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation levels

to approximately 50 watts. The low thermal resistance and

low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

IRF3205PBF

型号：IRF3205/IRF3205PBF

品牌：IR

封装：TO-220

包装：50PCS/管

电压 Vgs @ Rds on 测量:10V

电压, Vds 典型值:55V

电流, Id 连续:110A

Qg Typ： 97.3 nC

FET极性: N型沟道

存储温度：-55-100°

存储环境：常温

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